Announcement PDF A DISRUPTIVE TECHNOLOGY FOR STORAGE CLASS MEMORY July 2019 1 DISCLAIMER IMPORTANT NOTICE: This presentation has been prepared by 4DS Memory Limited. (“4DS” or the “Company”) based on information available to it as at the date of this presentation. The information in this presentation is provided in summary form and does not contain all information necessary to make an investment decision. This presentation does not constitute an offer, invitation, solicitation or recommendation with respect to the purchase or sale of any security in 4DS, nor does it constitute financial product advice or take into account any individual’s investment objectives, taxation situation, financial situation or needs. An investor must not act on the basis of any matter contained in this presentation but must make its own assessment of 4DS and conduct its own investigations. 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Such forward looking statements are based on numerous assumptions regarding the Company’s present and future business strategies and the political and economic environment in which 4DS will operate in the future, which are subject to change without notice. Past performance is not necessarily a guide to future performance and no representation or warranty is made as to the likelihood of achievement or reasonableness of any forward looking statements or other forecast. To the full extent permitted by law, 4DS and its directors, officers, employees, advisers, agents and intermediaries disclaim any obligation or undertaking to release any updates or revisions to information to reflect any change in any of the information contained in this presentation (including, but not limited to, any assumptions or expectations set out in the presentation). The information presented in this presentation is subject to change without notice and 4DS does not have any responsibility or obligation to inform you of any matter arising or coming to their notice, after the date of this presentation, which may affect any matter referred to in this presentation. The distribution of this presentation may be restricted by law and you should observe any such restrictions. 2 INVESTMENT HIGHLIGHTS. World-leading Silicon Valley based Interface Switching ReRAM developer 4DS is the most advanced Interface Switching ReRAM 20 US patents developed and granted and 10 pending or filed The most promising Interface Switching ReRAM cell for Storage Class Memory Joint development agreement with Western Digital subsidiary HGST since 2014 Strategic collaboration with imec signed in November 2017 Completed third iteration of 300mm wafers, most successful todate Demonstrated improvement in speed, endurance and retention Lot 4 300mm wafers manufacture has commenced, analysis and results due Q3 2019 Completed A$3.25 placement, launched A$750k SPP, total cash ~A$5.85 million* *Assumes successful SPP for entire A$750k and after placement fees 3 BOARD AND MANAGEMENT. Global expertise founding and building high-tech companies. JIM DORRIAN Dr GUIDO ARNOUT HOWARD DIGBY Non-Executive Chairman CEO & Managing Director Non-Executive Director Served as CEO of several Silicon Valley companies 30+ years in commercialising electronics technology Former senior roles at IBM, Adobe, Gartner and the Economist Group Extensive M&A experience Successes include, PowerEscape, CoWare, CrossCheck Technology and Silvar-Liso Non-Executive Director Elsight Ltd and Chairman of Omni Market Ltd Partner at VC firm Crosspoint Venture Partners Advisor to a number of early stage technology companies Dr SESHUBABU DESU DAVID McAULIFFE Chief Technology Officer Executive Director Chief Engineering Officer Expert in thin films, semiconductor processing and non-volatile memories Experienced company director Executive roles with a number of leading memory companies in Silicon Valley Professor, Dean and Head of Electrical Engineering at various universities Involved in numerous capital raisings and in-licensing of technologies Founder of several companies in Australia, France and the UK, many of which are now ASX listed MICHAEL VAN BUSKIRK These include, Adesto Technologies Corporation, Innovative Silicon Inc and Spansion Inc. 4 THE CHALLENGE. DRAM and NAND Flash are the main technologies utilized today. Both are US$40-50 billion annual markets – and growing. DRAM is super-fast, has exceptional endurance but is expensive and volatile NAND Flash is slow, has limited endurance but is cheap and non-volatile A new innovation is required and the industry refers to it as Storage Class Memory - over time this is predicted to have a market size as large as DRAM and NAND Flash 5 STORAGE CLASS MEMORY Attempts to combine the best characteristics of DRAM and NAND Flash Emerging as the leading new category to extend the memory hierarchy. Access Time (Sec) STORAGE CLASS MEMORY. Storage Memory Non-Volatile NAND Flash Volatile Storage Class Memory DRAM Die Cost ($/GB) Battleground for next generation memory technology. Faster – DRAM-like read speed Cheaper – NAND Flash-like costs Non-volatile – Retains data when power is off 6 STORAGE CLASS MEMORY REQUIREMENTS. Requirements • Based on well-understood physics to be sustainable over generations • Area based to achieve cost and density as close as possible to NAND Flash • Capable of speed comparable to DRAM • Endurance suitable for Storage Class Memory • As much retention as possible to meet Storage Class Memory requirements • As much retention as possible without sacrificing speed and endurance • Tunable technology in the vast opportunity between DRAM and NAND Flash 7 STORAGE CLASS MEMORY REQUIREMENTS. 4DS Requirements ✓ • Based on well-understood physics to be sustainable over generations ✓ • Area based to achieve cost and density as close as possible to NAND Flash ✓ • Capable of speed comparable to DRAM ✓ • Endurance suitable for Storage Class Memory ✓ • As much retention as possible to meet Storage Class Memory requirements ✓ • As much retention as possible without sacrificing speed and endurance ✓ • Tunable technology in the vast opportunity between DRAM and NAND Flash 8 PARAMETERS NEEDED MET. 4DS Interface Switching ReRAM has displayed enough relevant and meaningful data in each category Scales to geometries needed for high-density memory and 3D Endurance far exceeds NAND Flash Endurance has moved into the tens of millions of cycles Read speed comparable to DRAM – an area-based ReRAM first No need for speed crippling error correction – a ReRAM first Retention data adequate for Storage Class Memory 9 JOINT DEVELOPMENT AGREEMENT. HGST, is a subsidary of Western Digital Corporation (US$16 billion market cap), one of the largest global leader in digital storage. Strategic innovator in emerging high growth technologies Commenced JDA in 2014 – Renewed in 2015, 2016, 2017, 2018 and 2019 Insight into what is important in a data-centric world Siva Sivaram, Head of Memory at Western Digital, commented “We are committed to ReRAM, it is scalable with greater density, lower cost and latency and longer endurance”* *12/8/2016 EE Times – 14 Views from the Flash Summit 10 COLLABORATION AGREEMENT. imec, is the world’s #1 independent semiconductor development institute Collaborates with the who’s who of electronic products and systems Collaborates with makers of high-volume high-density memories Has a world leading track record in the transfer of semiconductor processes Uses the same tools as industry for high-volume production of high-density memories Has a proven megabit memory platform to fast track development of Megabit chip Used this platform to explore a wide range of emerging memories 11 COLLABORATION OBJECTIVES. Imec and 4DS have already commenced Lot 4 wafer manufacturing, results due Q3 2019 End goal is to fabricate a megabit 4DS Interface Switching chip with a fully functioning memory Develop a fully transferable fabrication compatible process Mimic industry standard high volume production Utilizing imec’s proven megabit memory platform reduces time and cost Report technical progress to shareholders – more often upon significant developments 12 CAPITAL STRUCTURE. ASX Code 4DS Market Cap (Fully Diluted) A$ 57 Million* Ordinary Shares on Issue 1,135 Million Unlisted Options Cash 133 Million ~A$5.85 Million – July 2019** Board and Management 6.7% Top 20 28% * As at 17 July 2019 placement price ** Assumes successful SPP and after placement expenses 13 INVESTMENT PROPOSITION. 4DS is developing a breakthrough Interface Switching ReRAM Storage Class Memory solution Significant progress to date is pivotal for Storage Class Memory Six year strategic partnership with HGST, leader in digital storage Imec - strategic collaboration to develop megabit chip with the world-leading researcher in nano electronics Consistently achieves stated milestones Strong patent portfolio with 20 granted patents wholly owned and developed in-house World-class team of memory specialists, material scientists and test engineers Board experienced in founding, building and exiting high tech companies Sufficient cash to meet current objectives 4DS is addressing the massive memory demands of tomorrow 14 THANK YOU SILICON VALLEY 3155 Skyway Court Fremont CA 94539 UNITED STATES AUSTRALIA ABN 43 145 590 110 ASX Code: 4DS www.4dsmemory.com [email protected] Level 2, 50 Kings Park Road West Perth WA 6005 AUSTRALIA 15