4DS Memory

Highly anticipated Q&A session regarding the recent Megabit Success and the next steps for 4DS Memory.

Join 4DS Memory's Interim Executive Chairman, David McAuliffe, as he delves into the exciting details of the recent success of the Fourth Platform Lot.

The background on Memory Chips & Success of the Fourth Platform Lot

How the Platform Lot has scaled across different geometries

Popularity of the semi-conductor technology in the U.S.

Brief overview of the Fourth Platform Lot results below:

Successfully incorporated its ReRAM memory cells into the imec megabit array

Validated that 4DS Interface Switching ReRAM technology is transferable from fab to fab

Demonstrated a fully functional megabit array with 4DS Interface Switching ReRAM memory cells

Demonstrated consistent read and write speeds equivalent to DRAM

Proven endurance in excess of 2 billion cycles at DRAM read and write speed on a megabit array

Demonstrated persistent memory with variable and tuneable retention.

See the full Megabit Success announcement here.

This is our first Q&A on the investor hub, and we hope it sparks conversations and deeper connections with investors and those interested in our story.